| /* | |
| * $Id: mtd-abi.h,v 1.7 2004/11/23 15:37:32 gleixner Exp $ | |
| * | |
| * Portions of MTD ABI definition which are shared by kernel and user space | |
| */ | |
| #ifndef __MTD_ABI_H__ | |
| #define __MTD_ABI_H__ | |
| struct erase_info_user { | |
| uint32_t start; | |
| uint32_t length; | |
| }; | |
| struct mtd_oob_buf { | |
| uint32_t start; | |
| uint32_t length; | |
| unsigned char *ptr; | |
| }; | |
| #define MTD_ABSENT 0 | |
| #define MTD_RAM 1 | |
| #define MTD_ROM 2 | |
| #define MTD_NORFLASH 3 | |
| #define MTD_NANDFLASH 4 | |
| #define MTD_PEROM 5 | |
| #define MTD_OTHER 14 | |
| #define MTD_UNKNOWN 15 | |
| #define MTD_CLEAR_BITS 1 /* Bits can be cleared (flash) */ | |
| #define MTD_SET_BITS 2 /* Bits can be set */ | |
| #define MTD_ERASEABLE 4 /* Has an erase function */ | |
| #define MTD_WRITEB_WRITEABLE 8 /* Direct IO is possible */ | |
| #define MTD_VOLATILE 16 /* Set for RAMs */ | |
| #define MTD_XIP 32 /* eXecute-In-Place possible */ | |
| #define MTD_OOB 64 /* Out-of-band data (NAND flash) */ | |
| #define MTD_ECC 128 /* Device capable of automatic ECC */ | |
| #define MTD_NO_VIRTBLOCKS 256 /* Virtual blocks not allowed */ | |
| /* Some common devices / combinations of capabilities */ | |
| #define MTD_CAP_ROM 0 | |
| #define MTD_CAP_RAM (MTD_CLEAR_BITS|MTD_SET_BITS|MTD_WRITEB_WRITEABLE) | |
| #define MTD_CAP_NORFLASH (MTD_CLEAR_BITS|MTD_ERASEABLE) | |
| #define MTD_CAP_NANDFLASH (MTD_CLEAR_BITS|MTD_ERASEABLE|MTD_OOB) | |
| #define MTD_WRITEABLE (MTD_CLEAR_BITS|MTD_SET_BITS) | |
| /* Types of automatic ECC/Checksum available */ | |
| #define MTD_ECC_NONE 0 /* No automatic ECC available */ | |
| #define MTD_ECC_RS_DiskOnChip 1 /* Automatic ECC on DiskOnChip */ | |
| #define MTD_ECC_SW 2 /* SW ECC for Toshiba & Samsung devices */ | |
| /* ECC byte placement */ | |
| #define MTD_NANDECC_OFF 0 /* Switch off ECC (Not recommended) */ | |
| #define MTD_NANDECC_PLACE 1 /* Use the given placement in the structure (YAFFS1 legacy mode) */ | |
| #define MTD_NANDECC_AUTOPLACE 2 /* Use the default placement scheme */ | |
| #define MTD_NANDECC_PLACEONLY 3 /* Use the given placement in the structure (Do not store ecc result on read) */ | |
| #define MTD_NANDECC_AUTOPL_USR 4 /* Use the given autoplacement scheme rather than using the default */ | |
| struct mtd_info_user { | |
| uint8_t type; | |
| uint32_t flags; | |
| uint32_t size; /* Total size of the MTD */ | |
| uint32_t erasesize; | |
| uint32_t oobblock; /* Size of OOB blocks (e.g. 512) */ | |
| uint32_t oobsize; /* Amount of OOB data per block (e.g. 16) */ | |
| uint32_t ecctype; | |
| uint32_t eccsize; | |
| }; | |
| struct region_info_user { | |
| uint32_t offset; /* At which this region starts, | |
| * from the beginning of the MTD */ | |
| uint32_t erasesize; /* For this region */ | |
| uint32_t numblocks; /* Number of blocks in this region */ | |
| uint32_t regionindex; | |
| }; | |
| #define MEMGETINFO _IOR('M', 1, struct mtd_info_user) | |
| #define MEMERASE _IOW('M', 2, struct erase_info_user) | |
| #define MEMWRITEOOB _IOWR('M', 3, struct mtd_oob_buf) | |
| #define MEMREADOOB _IOWR('M', 4, struct mtd_oob_buf) | |
| #define MEMLOCK _IOW('M', 5, struct erase_info_user) | |
| #define MEMUNLOCK _IOW('M', 6, struct erase_info_user) | |
| #define MEMGETREGIONCOUNT _IOR('M', 7, int) | |
| #define MEMGETREGIONINFO _IOWR('M', 8, struct region_info_user) | |
| #define MEMSETOOBSEL _IOW('M', 9, struct nand_oobinfo) | |
| #define MEMGETOOBSEL _IOR('M', 10, struct nand_oobinfo) | |
| #define MEMGETBADBLOCK _IOW('M', 11, loff_t) | |
| #define MEMSETBADBLOCK _IOW('M', 12, loff_t) | |
| struct nand_oobinfo { | |
| uint32_t useecc; | |
| uint32_t eccbytes; | |
| uint32_t oobfree[8][2]; | |
| uint32_t eccpos[32]; | |
| }; | |
| #endif /* __MTD_ABI_H__ */ |